Oxide thin film transistor and method for driving the same, display device

ABSTRACT

An oxide thin film transistor includes a gate electrode, and a first active layer structure and a second active layer structure arranged subsequently, the first active layer structure includes a first conductive connection portion and a second conductive connection portion arranged oppositely, the second active layer structure includes a third conductive connection portion and a fourth conductive connection portion arranged oppositely, and the second oxide semiconductor pattern respectively coupled to the third conductive connection portion and the fourth conductive connection portion, and an orthographic projection of the first oxide semiconductor pattern on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate are both located within an orthographic projection of the gate electrode on the substrate, the second conductive connection portion is coupled to the third conductive connection portion.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims a priority of the Chinese patent application No.201910968517.2 filed on Oct. 12, 2019 and titled with oxide thin filmtransistor, method for driving the same and display device, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to the field of TFT technology, inparticular to an oxide thin film transistor, a method for driving thesame and a display device.

BACKGROUND

Oxide thin film transistor (Oxide TFT) is a special type of field effecttransistor. When manufacturing an Oxide TFT, the semiconductor activelayer and dielectric are deposited on the substrate in the form of athin film. Oxide TFTs have become the first choice for display panelswith large size, high resolution, low power consumption, and narrowframe due to their advantages of high electron mobility, low off-statecurrent, and simple manufacturing process.

SUMMARY

In a first aspect, the present disclosure provides in some embodimentsan oxide thin film transistor including: a gate electrode arranged on asubstrate; and at least two active layer structures, wherein the atleast two active layer structures include a first active layer structureand a second active layer structure, the first active layer structureincludes a first conductive connection portion and a second conductiveconnection portion arranged oppositely, and a first oxide semiconductorpattern arranged between the first conductive connection portion and thesecond conductive connection portion, the first oxide semiconductorpattern is respectively coupled to the first conductive connectionportion and the second conductive connection portion, the second activelayer structure includes a third conductive connection portion and afourth conductive connection portion arranged oppositely, and a secondoxide semiconductor pattern arranged between the third conductiveconnection portion and the fourth conductive connection portion, and thesecond oxide semiconductor pattern is respectively connected to thethird conductive connection portion and the fourth conductive connectionportion, and an orthographic projection of the first oxide semiconductorpattern on the substrate and an orthographic projection of the secondoxide semiconductor pattern on the substrate are both located within anorthographic projection of the gate electrode on the substrate, thesecond conductive connection portion is coupled to the third conductiveconnection portion.

Optionally, an orthographic projection of the first conductiveconnection portion on the substrate and the orthographic projection ofthe first oxide semiconductor pattern on the substrate have a firstoverlapping area; an orthographic projection of the second conductiveconnection portion on the substrate and the orthographic projection ofthe first oxide semiconductor pattern on the substrate have a secondoverlapping area; an orthographic projection of the third conductiveconnection portion on the substrate and the orthographic projection ofthe second oxide semiconductor pattern on the substrate have a thirdoverlapping area; an orthographic projection of the fourth conductiveconnecting portion on the substrate and the orthographic projection ofthe second oxide semiconductor pattern on the substrate have a fourthoverlapping area; the second overlapping area and the third overlappingarea are located between the first overlapping area and the fourthoverlapping area.

Optionally, the thin film transistor further includes a first lappingportion, and the second conductive connection portion and the thirdconductive connection portion are coupled to each other through thefirst lapping portion, and an orthographic projection of the firstlapping portion on the substrate does not overlap the orthographicprojection of the first oxide semiconductor pattern on the substrate,and does not overlap with the orthographic projection of the secondoxide semiconductor pattern on the substrate.

Optionally, the first oxide semiconductor pattern and the second oxidesemiconductor pattern are sequentially arranged along a first direction,and are staggered along a second direction perpendicular to the firstdirection.

Optionally, an orthographic projection of the first oxide semiconductorpattern in the second direction and an orthographic projection of thesecond oxide semiconductor pattern in the second direction have a fifthoverlapping areas, the second conductive connection portion, the firstlapping portion, and the third conductive connection portion are formedas an integrated in-line structure extending along the second direction.

Optionally, a size of the fifth overlapping area in the first directionis the same as a width of the integrated in-line structure in the firstdirection.

Optionally, the first oxide semiconductor pattern and the second oxidesemiconductor pattern are formed as an integrated structure, and thesecond conductive connection portion is multiplexed as the thirdconductive connection portion.

Optionally, the at least two active layer structures extend along afirst direction, the first conductive connection portion includes afirst portion and a second portion, the first portion extends along asecond direction perpendicular to the first direction, the secondportion is extended from the first portion along the second direction,an orthographic projection of the first portion on the substrate and theorthographic projection of the first oxide semiconductor pattern on thesubstrate have the first overlapping area, and an orthographicprojection of the second portion on the substrate does not overlap theorthographic projection of the first oxide semiconductor pattern on thesubstrate.

Optionally, the first portion and the second portion form an integratedstrip structure along the second direction.

Optionally, a width of the first overlapping area is the same as a widthof the integrated strip structure in the first direction.

Optionally, the at least two active layer structures extend along afirst direction, the fourth conductive connection portion includes athird portion and a fourth portion, the third portion extends along asecond direction perpendicular to the first direction, an orthographicprojection of the third portion on the substrate and the orthographicprojection of the second oxide semiconductor pattern on the 1 partiallyoverlap to form a fourth overlapping area; the fourth portion extendsalong the first direction, an orthographic projection of the fourthportion on the substrate and the orthographic projection of the secondoxide semiconductor pattern on the substrate do not overlap, and thefourth portion is coupled to a first end of the third portion, and anorthographic projection of the first end on the substrate and theorthographic projection of the second oxide semiconductor pattern on thesubstrate do not overlap.

Optionally, the third portion includes a first sub-portion and a secondsub-portion, an orthographic projection of the first sub-portion on thesubstrate and the orthographic projection of the second oxidesemiconductor pattern on the substrate have the fourth overlapping area,an orthographic projection of the second sub-portion on the substrateand the orthographic projection of the second oxide semiconductorpattern on the substrate do not overlap.

Optionally, the third portion and the fourth portion are collectivelyformed as an L-shaped pattern or a T-shaped pattern.

Optionally, a width of the fourth overlapping region is the same as awidth of the third portion in the first direction.

Optionally, the third portion and the fourth portion are formed as anintegral structure.

Optionally, the first oxide semiconductor pattern and the second oxidesemiconductor pattern are sequentially arranged along a first direction,an orthographic projection of the first conductive connection portion onthe substrate and the orthographic projection of the first oxidesemiconductor pattern on the substrate have a first overlapping area; anorthographic projection of the second conductive connection portion onthe substrate and the orthographic projection of the first oxidesemiconductor pattern on the substrate have a second overlapping area;an orthographic projection of the third conductive connection portion onthe substrate and the orthographic projection of the second oxidesemiconductor pattern on the substrate 1 have a third overlapping area;an orthographic projection of the fourth conductive connecting portionon the substrate and the orthographic projection of the second oxidesemiconductor pattern on the substrate 1 have a fourth overlapping area;in a second direction perpendicular to the first direction, the secondoverlapping area and the third overlapping area are located on a firstside of the first oxide semiconductor pattern, and the first overlappingarea and the fourth overlapping area are located on a second side of thesecond oxide semiconductor pattern, and the first side and the secondside are opposite to each other.

Optionally, the thin film transistor further includes a second lappingportion, and the second conductive connection portion and the thirdconductive connection portion are coupled to each other through thesecond lapping portion, an orthographic projection of the second lappingportion on the substrate does not overlap the orthographic projection ofthe first oxide semiconductor pattern on the substrate, and does notoverlap the orthographic projection of the second oxide semiconductorpattern on the substrate.

Optionally, the second conductive connection portion, the second lappingportion, and the third conductive connection portion are formed in anintegrated in-line structure along the first direction.

Optionally, the first conductive connection portion includes a fifthportion and a sixth portion coupled to each other, and the fifth portionextends along the first direction, an orthographic projection of thefifth portion on the substrate and the orthographic projection of thefirst oxide semiconductor pattern on the substrate have the firstoverlapping area; the sixth portion extends along the second direction,an orthographic projection of the sixth portion on the substrate and theorthographic projection of the first oxide semiconductor pattern on thesubstrate do not overlap.

Optionally, the sixth portion is coupled to a first end of the fifthportion, and an orthographic projection of the first end on thesubstrate and the orthographic projection of the first oxidesemiconductor pattern on the substrate do not overlap, a firstconductive connecting portion formed after the fifth portion is coupledto the sixth portion is of an L shape or T shape.

Optionally, the fourth conductive connecting portion includes a seventhportion, an eighth portion, and a ninth portion; the seventh portionextends along the first direction, and an orthographic projection of theseventh portion on the substrate and the orthographic projection of thesecond oxide semiconductor pattern on the substrate have the fourthoverlapping area; the ninth portion extends along the first direction,an orthographic projection of the ninth portion on the substrate and theorthographic projection of the second oxide semiconductor pattern on thesubstrate do not overlap; the eighth portion extends along the seconddirection, an orthographic projection of the eighth portion on thesubstrate is located between the orthographic projection of the seventhportion on the substrate and the orthographic projection of the ninthportion on the substrate, and does not overlap the orthographicprojection of the second oxide semiconductor pattern on the substrate,the seventh portion is coupled to the ninth portion through the eighthportion.

Optionally, along the second direction, a width of the ninth portion isgreater than a width of the seventh portion.

Optionally, the seventh portion, the eighth portion, and the ninthportion form an integral structure.

Optionally, the first oxide semiconductor pattern and the second oxidesemiconductor pattern are arranged at a same layer and made of a samematerial.

Optionally, the first conductive connection portion, the secondconductive connection portion, the third conductive connection portion,and the fourth conductive connection portion are arranged at a samelayer and made of a same material.

In a second aspect, the present disclosure provides in some embodimentsa display device including the above-mentioned oxide thin filmtransistor.

In a third aspect, the present disclosure provides in some embodiments amethod of driving the above oxide thin film transistor, the methodincludes applying a driving signal to the gate electrode of the oxidethin film transistor, the second conductive connection portion includedin the first active layer structure, and the fourth conductiveconnection portion included in the second active layer structure, sothat the oxide thin film transistor is turned on.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings described here are used to provide a further understandingof the present disclosure and constitute a part of the presentdisclosure. The exemplary embodiments of the present disclosure are usedto explain the present disclosure, and do not constitute an improperlimitation of the present disclosure.

FIG. 1 is a schematic diagram of an oxide thin film transistor in afirst structure according to an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of the deterioration of an active layer ofthe oxide thin film transistor in the first structure;

FIG. 3 is a schematic diagram of an oxide thin film transistor in asecond structure according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of the deterioration of an active layer ofthe oxide thin film transistor in the second structure;

FIG. 5 is a schematic diagram of an oxide thin film transistor in athird structure according to an embodiment of the present disclosure;

FIG. 6 is a schematic cross-sectional view along the A1-A2 direction inFIG. 5;

FIG. 7 is a schematic diagram of the deterioration of an active layer ofthe oxide thin film transistor in the third structure;

FIG. 8 is a schematic diagram of an oxide thin film transistor in afourth structure according to an embodiment of the present disclosure;

FIG. 9 is a schematic diagram of the deterioration of an active layer ofthe oxide thin film transistor in the fourth structure.

DETAILED DESCRIPTION

In order to further illustrate an oxide thin film transistor, a drivingmethod thereof, and a display device provided by the embodiments of thepresent disclosure, a detailed description will be given below withreference to the accompanying drawings.

In the process of manufacturing the oxide thin film transistor in therelated art, due to the instability of the manufacturing process of theoxide active layer, the oxide active layer is prone to localdegradation, which affects the yield of the display panel.

When the oxide semiconductor pattern in the Oxide TFT is locallydeteriorated, it will cause the display panel to have driving brightspots and sand mura defects. The basic reason for these defects is thatthe deterioration of the oxide semiconductor pattern (as the activelayer of the oxide thin film transistor) will cause the initialthreshold voltage Vth in the characteristic curve of the Oxide TFT toshift to the left, and the off-state current Ioff of the Oxide TFT to betoo large. As a result, when the Oxide TFT is used to drive the pixel toemit light, the pixel will be continuously driven to produce drivingbright spots and sand mura defects.

When the oxide semiconductor pattern in Oxide TFT is locallydeteriorated, the degradation range is very small, only a few microns,and therefore only affects a single Oxide TFT. Therefore, in the presentdisclosure, Oxide TFT includes a plurality of oxide semiconductorpatterns connected in series, that is, one Oxide TFT is set to include aplurality of sub-Oxide TFTs connected in series, so that when the oxidesemiconductor pattern in one sub-Oxide TFT deteriorates, the good workperformance of the Oxide TFT can be ensured.

Referring to FIG. 1 and FIG. 2, an embodiment of the present disclosureprovides an oxide thin film transistor, including: a gate electrode 2arranged on a substrate 1; and at least two active layer structures. Theat least two active layer structures include a first active layerstructure 31 and a second active layer structure 32, and the firstactive layer structure 31 includes: a first conductive connectionportion 311 and a second conductive connection portion 313 arrangedoppositely, and a first oxide semiconductor pattern 312 arranged betweenthe first conductive connection portion 311 and the second conductiveconnection portion 313, the first oxide semiconductor pattern 312 isrespectively coupled to the first conductive connection portion 311 andthe second conductive connection portion 313; the second active layerstructure 32 includes: a third conductive connection portion 321 and afourth conductive connection portion 323 arranged oppositely, and asecond oxide semiconductor pattern 322 arranged between the thirdconductive connection portion 321 and the fourth conductive connectionportion 323, and the second oxide semiconductor pattern 322 isrespectively connected to the third conductive connection portion 321and the fourth conductive connection portion 323; an orthographicprojection of the first oxide semiconductor pattern 312 on the substrate1 and an orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1 are both located within an orthographicprojection of the gate electrode 2 on the substrate 1, the secondconductive connection portion 313 is coupled to the third conductiveconnection portion 321.

Specifically, the material of the substrate 1 can be selected accordingto actual needs. Illustratively, a glass substrate 1 or a flexiblesubstrate 1 of other materials is selected. When an oxide thin filmtransistor is manufactured on the substrate 1, a buffer layer, alight-shielding layer and other film layers are formed on the substrate1 first. Then an oxide thin film transistor is continued to bemanufactured on a side of the substrate 1 where the buffer layer and thelight-shielding layer are formed. When an oxide thin film transistor ismanufactured, for example, the gate electrode 2 and the at least twoactive layer structures that are arranged in a stack may be sequentiallyformed along a direction away from the substrate 1.

The number of the active layer structures can be set according to actualneeds. Illustratively, the at least two active layer structures can beset to include a first active layer structure 31 and a second activelayer structure 32. The first active layer structure 31 includes a firstconductive connection portion 311 and a second conductive connectionportion 313 arranged oppositely in a direction parallel to the substrate1, and further includes the first oxide semiconductor pattern 312arranged between the first conductive connection portion 311 and thesecond conductive connection portion 313. The first oxide semiconductorpattern 312 is respectively coupled to the first conductive connectionportion 311 and the second conductive connection portion 313. The secondactive layer structure 32 includes a third conductive connection portion321 and a fourth conductive connection portion 323 arranged oppositelyin a direction parallel to the substrate 1, and further includes thesecond oxide semiconductor pattern 322 arranged between the thirdconductive connection portion 321 and the fourth conductive connectionportion 323. The second oxide semiconductor pattern 322 is respectivelycoupled to the third conductive connection portion 321 and the fourthconductive connection portion 323.

When the at least two active layer structures include the first activelayer structure 31 and the second active layer structure 32, the firstconductive connection portion 311 in the first active layer structure 31and the fourth conductive connection portion 323 in the second activelayer structure 32 are used as two electrodes (such as a sourceelectrode and a drain electrode) of the oxide thin film transistor.

It is worth noting that the first conductive connection portion 311 andthe second conductive connection portion 313 may be formed of a separateconductive material, or may be formed by doping opposite ends of thefirst oxide semiconductor pattern 312. Similarly, the third conductiveconnection portion 321 and the fourth conductive connection portion 323may be formed of a separate conductive material, or may be formed bydoping opposite ends of the second oxide semiconductor pattern 322.

In the oxide thin film transistor of the above structure, theorthographic projection of the first oxide semiconductor pattern 312 onthe substrate 1 and the orthographic projection of the second oxidesemiconductor pattern 322 on the substrate 1 are both located within theorthographic projection of the gate electrode 2 on the substrate 1, sothat the first active layer structure 31 and the gate electrode 2 areformed together as a first sub-Oxide TFT structure, and the secondactive layer structure 32 and the gate electrode 2 are formed togetheras a second sub-Oxide TFT structure, so that the oxide thin filmtransistor provided by the embodiment of the present disclosure isformed as a structure including two sub-Oxide TFTs connected in series.

When the oxide thin film transistor is in operation, a driving signalcan be applied to the gate electrode 2 of the oxide thin filmtransistor, the second conductive connection portion 313 and the fourthconductive connection portion 323, under the control of the drivingsignal, the first and second sub-Oxide TFTs included in the oxide thinfilm transistor are both turned on, so that the entire oxide thin filmtransistor is in an ON state and outputs a driving signal.

It should be noted that the oxide thin film transistor may include aplurality (more than two) of the active layer structures, and theplurality of active layer structures may has a connection relationshipsimilar to the first active layer structure 31 and the second activelayer structure 32, such that the plurality of the active layerstructures are formed in series, and at the same time, a conductiveconnecting part at the head end of the series connected structure and aconductive connecting part at the tail end of the series connectedstructure are used as the two electrodes of the oxide thin filmtransistor.

According to the specific structure and working process of theabove-mentioned oxide thin film transistor, the oxide thin filmtransistor provided by the embodiments of the present disclosureincludes the at least two active layer structures, so that the oxidethin film transistor can for at least two series connected channelstructures during operation, so that when the oxide semiconductorpattern in an active layer structure in the oxide thin film transistordeteriorates, it will only affect the performance of the sub-Oxide TFTcorresponding to the active layer structure, even if the characteristiccurve of this sub-Oxide TFT shifts to the left, the other sub-Oxide TFTsstill maintain at a normal working state.

In more detail, when the oxide semiconductor pattern of one sub-OxideTFT deteriorates, it will cause on-state current Ion and off-statecurrent Ioff of the sub-Oxide TFT to increase. When each sub-Oxide TFTis controlled to be in the on state so that the oxide thin filmtransistor is turned on as a whole, under the influence of the on-statecurrent Ion of the sub-Oxide TFT, the overall on-state current Ion ofthe oxide thin film transistor increases, thereby effectively improvingthe charging capability of the oxide thin film transistor. When theoxide thin film transistor is turned off, each sub-Oxide TFT is in theoff state, so even if the off-state current Ioff of the sub-Oxide TFTincrease, it cannot flow out through other sub-Oxide TFTs. Therefore,the increased off-state current Ioff will not affect the overalloff-state current Ioff of the oxide thin film transistor, so that theoverall off-state current Ioff of the oxide thin film transistor canstill be maintained at a lower level. Therefore, the oxide thin filmtransistor provided by the embodiments of the present disclosure notonly has higher stability, but also has a stronger driving capability.When the oxide thin film transistor provided by the embodiments of thepresent disclosure is used to drive the pixels in the display panel toemit light, the display panel will not produce driving bright spots andsand mura defects.

In the oxide thin film transistor provided by the foregoing embodiment,when the at least two active layer structures include the first activelayer structure 31 and the second active layer structure 32, the firstactive layer structure 31 and the second active layer structure 32 havevarious arrangement, and several specific structures are given below.

As shown in FIGS. 1, 3, and 5, in some embodiments, the orthographicprojection of the first conductive connection portion 311 on thesubstrate 1 and the orthographic projection of the first oxidesemiconductor pattern 312 on the substrate have a first overlappingarea; the orthographic projection of the second conductive connectionportion 313 on the substrate 1 and the orthographic projection of thefirst oxide semiconductor pattern 312 on the substrate 1 have a secondoverlapping area; the orthographic projection of the third conductiveconnection portion 321 on the substrate 1 and the orthographicprojection of the second oxide semiconductor pattern 322 on thesubstrate 1 have a third overlapping area; the orthographic projectionof the fourth conductive connecting portion 323 on the substrate 1 andthe orthographic projection of the second oxide semiconductor pattern322 on the substrate 1 have a fourth overlapping area; the secondoverlapping area and the third overlapping area are located between thefirst overlapping area and the fourth overlapping area.

Specifically, the first conductive connecting portion 311 and the firstoxide semiconductor pattern 312 may be coupled in various ways, and thesecond conductive connecting portion 313 and the first oxidesemiconductor pattern 312 may be coupled in various ways.

Exemplarily, the orthographic projection of the first conductiveconnection portion 311 on the substrate 1 and the orthographicprojection of the first oxide semiconductor pattern 312 on the substrate1 have the first overlapping area, and the orthographic projection ofthe second conductive connection portion 313 on the substrate 1 and theorthographic projection of the first oxide semiconductor pattern 312 onthe substrate 1 have a second overlapping area. When there is aninsulating layer between the conductive connecting portion and the oxidesemiconductor pattern, a first via hole can be provided in theinsulating layer corresponding to the first overlapping area, and asecond via hole can be provided in the insulating layer corresponding tothe second overlapping area, so that the first conductive connectionportion 311 is coupled to the first oxide semiconductor pattern 312through the first via hole, and the second conductive connection portion313 is coupled to the first oxide semiconductor pattern through thesecond via hole. When there is no insulating layer between theconductive connection portion and the oxide semiconductor pattern, thefirst conductive connection portion 311 and the second conductiveconnection portion 313 are directly formed on a surface of the firstoxide semiconductor pattern 312 away from the substrate 1, so that thefirst conductive connection portion 311 can be directly lapped on thefirst oxide semiconductor pattern in the first overlapping area, and thesecond conductive connection portion 313 can be directly lapped on thefirst oxide semiconductor pattern 312 in the second overlapping area.

Similarly, when there is an insulating layer between the conductiveconnecting portion and the oxide semiconductor pattern, a third via holecan be provided in the insulating layer corresponding to the thirdoverlapping area, and a fourth via hole can be provided in theinsulating layer corresponding to the fourth overlapping area, so thatthe third conductive connection portion 321 is coupled to the secondoxide semiconductor pattern 322 through the third via hole, and thefourth conductive connection portion 323 is coupled to the second oxidesemiconductor pattern 322 through the fourth via hole. When there is noinsulating layer between the conductive connection portion and the oxidesemiconductor pattern, the third conductive connection portion 321 andthe fourth conductive connection portion 323 are directly formed on thesurface of the second oxide semiconductor pattern 322 away from thesubstrate 1, so that the third conductive connection portion 321 can bedirectly lapped on the second oxide semiconductor pattern in the thirdoverlapping area, and the fourth conductive connection portion 323 canbe directly lapped on the second oxide semiconductor pattern 322 in thefourth overlapping area.

In addition, in the above-mentioned embodiment, the specific positionsof the first overlapping area, the second overlapping area, the thirdoverlapping area, and the fourth overlapping area can be set accordingto actual needs. The second overlapping area and the third overlappingarea may be arranged between the first overlapping area and the fourthoverlapping area, so that the second conductive connection portion 313is located close to the third conductive connection portion 321, whichfacilitate the coupling between the third conductive connection portion321 and the fourth conductive connection portion 323, and facilitatereducing the area occupied by the oxide thin film transistor.

In the oxide thin film transistor provided by the foregoing embodiment,there are various specific coupling modes between the second conductiveconnection portion 313 and the third conductive connection portion 321.Several specific coupling modes are listed below.

As shown in FIGS. 1 and 2, in some embodiments, the thin film transistorfurther includes a first lapping portion 4, and the second conductiveconnection portion 313 and the third conductive connection portion 321is coupled to each other through the first lapping portion 4, and theorthographic projection of the first lapping portion 4 on the substrate1 does not overlap the orthographic projection of the first oxidesemiconductor pattern 312 on the substrate 1, and does not overlap withthe orthographic projection of the second oxide semiconductor pattern322 on the substrate 1.

Specifically, when the second conductive connecting portion 313 and thethird conductive connecting portion 321 are coupled to each otherthrough the first lapping portion 4, the first lapping portion 4 hasvarious shapes and layouts. For example, the at least two active layerstructures are sequentially arranged along a first direction, the firstdirection is X direction in the coordinate axis, when the first oxidesemiconductor pattern 312 and the second oxide semiconductor pattern 322are arranged along the X direction, the first lapping portion 4 can beset as a stripe pattern extending along the X direction, and the firstend of the stripe pattern along the X direction is connected to thesecond conductive connecting portion 313, the second end of thestrip-shaped pattern along the X direction is coupled to the thirdconductive connecting portion 321. In addition, according to actualneeds, the orthographic projection of the first lapping portion 4 on thesubstrate 1 overlaps or does not overlap the orthographic projection ofthe first oxide semiconductor pattern 312 on the substrate 1; and theorthographic projection of the first lapping portion 4 on the substrate1 overlaps or does not overlap the orthographic projection of the secondoxide semiconductor pattern 322 on the substrate 1.

In more detail, as shown in FIG. 1, the second conductive connectionportion 313 and the third conductive connection portion 321 are bothstrip-shaped patterns extending along the Y direction in the coordinateaxis, and the orthographic projections of the second conductiveconnection portion 313, the third conductive connecting portion 321 andthe first lapping portion 4 on the substrate 1 may form an I-shape/Hshape together.

As shown in FIG. 3 and FIG. 4, in some embodiments, the first oxidesemiconductor pattern 312 and the second oxide semiconductor pattern 322may be arranged in sequence along a first direction, and are staggeredalong a second direction perpendicular to the first direction.

Exemplarily, the first direction is the X direction, and the seconddirection is the Y direction. When the first oxide semiconductor pattern312 and the second oxide semiconductor pattern 322 are laid out, thefirst oxide semiconductor pattern 312 and the second oxide semiconductorpattern 322 may be sequentially arranged along the X direction, and arestaggered along the Y direction perpendicular to the X direction.

In some embodiments, an orthographic projection of the first oxidesemiconductor pattern 312 in the second direction and an orthographicprojection of the second oxide semiconductor pattern 322 in the seconddirection have a fifth overlapping areas, the second conductiveconnection portion 313, the first lapping portion 4, and the thirdconductive connection portion 321 are formed as an integrated in-linestructure extending along the second direction, the size of the fifthoverlapping area in the first direction is the same as the width of thein-line structure in the first direction.

Specifically, when the first oxide semiconductor pattern 312 and thesecond oxide semiconductor pattern 322 are arranged in sequence along afirst direction and are staggered along the second directionperpendicular to the first direction, it can be further set so that theorthographic projection of the first oxide semiconductor pattern 312 inthe second direction and the orthographic projection of the second oxidesemiconductor pattern 322 in the second direction have a fifthoverlapping area, so that the second conductive connecting portion 313,the first lapping portion 4, and the third conductive connecting portion321 are formed as an integrated in-line structure extending along thesecond direction, thereby simplifying the manufacturing process to thegreatest extent and reducing the layout area of the oxide thin filmtransistor.

Further, the size of the fifth overlapping area in the first directioncan be set to be the same as the width of the in-line structure in thefirst direction. This arrangement ensures that the second conductiveconnection portion 313 and the first oxide semiconductor pattern 312have a larger contact area, and the third conductive connection portion321 and the second oxide semiconductor pattern 322 have a larger contactarea, while minimizing the area occupied by the integrated in-linestructure, thereby effectively reducing the space occupied by the oxidethin film transistor while ensuring the operating performance of theoxide thin film transistor.

As shown in FIGS. 5-7, in some embodiments, the first oxidesemiconductor pattern 312 and the second oxide semiconductor pattern 322may be formed as an integrated structure, and the second conductiveconnection portion 313 is multiplexed as the third conductive connectionportion 321.

Specifically, the first oxide semiconductor pattern 312 and the secondoxide semiconductor pattern 322 are formed into an integrated structure,and the second conductive connection portion 313 is multiplexed as thethird conductive connection portion 321, which not only makes the areaof the oxide semiconductor pattern corresponding to the oxide thin filmtransistor larger and is more conducive to improving the operatingstability of the oxide thin film transistor, but also effectivelysimplifies patterning process and reducing the space occupied by theoxide thin film transistor when manufacturing the oxide semiconductorpattern 121.

It should be noted that a gate insulating layer 6 is formed between thegate electrode 2 and the oxide semiconductor pattern in FIG. 6.

In the oxide thin film transistor provided by the foregoing embodiment,the first conductive connection portion 311 and the second conductiveconnection portion 313 have various structures and layouts, and thefirst conductive connection portion 311 and the second conductiveconnection portion 313 are described below.

As shown in FIGS. 1, 3, and 5, in some embodiments, the first conductiveconnecting portion 311 includes a first portion 3110 extending along thesecond direction, and a second portion 3111 which is extended from thefirst portion 3110 along the second direction. The orthographicprojection of the first portion 3110 on the substrate 1 and theorthographic projection of the first oxide semiconductor pattern 312 onthe substrate 1 have the first overlapping area, the orthographicprojection of the second portion 3111 on the substrate 1 and theorthographic projection of the first oxide semiconductor pattern 312 onthe substrate 1 do not overlap.

Specifically, the first conductive connection portion 311 includes afirst portion 3110 and a second portion 3111, the first portion 3110extends along the second direction, and the orthographic projection ofthe first portion 3110 on the substrate 1 and the orthographicprojection of the first oxide semiconductor pattern 312 on the substrate1 have the first overlapping area, and the second portion 3111 isextended from the first portion 3110 along the second direction, theorthographic projection of the second portion 3111 on the substrate 1does not overlap the first oxide semiconductor structure, and the firstportion 3110 and the second portion 3111 form an integrated stripstructure along the second direction.

Further, it can also be arranged that the width of the first overlappingarea is the same as the width of the integrated strip structure alongthe first direction, but it is not limited to this.

When the first conductive connection portion 311 is formed into theabove structure, the first conductive connection portion 311 can be usedas the input electrode (such as the drain electrode) of the oxide thinfilm transistor, which is more convenient for the oxide thin filmtransistor to be coupled with external terminals.

In some embodiments, the fourth conductive connection portion 323includes a third portion 3230 and a fourth portion 3231. The thirdportion 3230 extends along a second direction perpendicular to the firstdirection. The orthographic projection of the third portion 3230 on thesubstrate 1 and the orthographic projection of the second oxidesemiconductor pattern 322 on the substrate 1 partially overlap to formthe fourth overlapping area; the fourth portion 3231 extends along thefirst direction, the orthographic projection of the fourth portion 3231on the substrate 1 and the orthographic projection of the second oxidesemiconductor pattern 322 on the substrate 1 do not overlap, and thefourth portion 3231 is coupled to the first end of the third portion3230, and the orthographic projection of the first end on the substrate1 and the orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1 do not overlap.

Specifically, the fourth conductive connection portion 323 includes athird portion 3230 and a fourth portion 3231, the third portion 3230extends along the second direction, and the third portion 3230 mayinclude a first sub-portion and a second sub-portion, the orthographicprojection of the first sub-portion on the substrate 1 and theorthographic projection of the second oxide semiconductor pattern 322 onthe substrate 1 have the fourth overlapping area, the orthographicprojection of the second sub-portion on the substrate 1 and theorthographic projection of the second oxide semiconductor pattern 322 onthe substrate 1 do not overlap, and the second sub-portion may beextended from the first sub-portion along the second direction.

The fourth portion 3231 extends along the first direction, and theorthographic projection of the fourth portion 3231 on the substrate 1does not overlap the orthographic projection of the second oxidesemiconductor pattern 322 on the substrate 1, the fourth portion 3231and the third part 3230 have multiple coupling modes. For example, thefourth portion 3231 is coupled to the first end of the third portion3230, and the orthographic projection of the first end of the thirdportion 3230 on the substrate 1 and the orthographic projection of thesecond oxide semiconductor pattern 322 on the substrate 1 do notoverlap. In this coupling mode, the third portion 3230 and the fourthportion 3231 are collectively formed as an L-shaped pattern or aT-shaped pattern.

Further, it can also be arranged that along the first direction, thewidth of the fourth overlapping area is the same as the width of thethird portion 3230, but it is not limited to this.

When the fourth conductive connection portion 323 is provided with theabove structure, the third portion 3230 and the fourth portion 3231 canbe formed into an integrated structure, and the fourth conductiveconnection portion 323 can be used as the output electrode (such as thesource electrode) of the oxide thin film transistor, when the oxide thinfilm transistor is used as the driving transistor in the pixel drivingcircuit, which is more conducive to the coupling between the outputelectrode of the driving transistor and the corresponding light-emittingdevice.

As shown in FIGS. 8 and 9, in some embodiments, an orthographicprojection of the first conductive connection portion 311 on thesubstrate 1 and the orthographic projection of the first oxidesemiconductor pattern 312 on the substrate 1 have the first overlappingarea; the orthographic projection of the second conductive connectionportion 313 on the substrate 1 and the orthographic projection of thefirst oxide semiconductor pattern 312 on the substrate 1 have a secondoverlapping area; the orthographic projection of the third conductiveconnection portion 321 on the substrate 1 and the orthographicprojection of the second oxide semiconductor pattern 322 on thesubstrate 1 have a third overlapping area; the orthographic projectionof the fourth conductive connecting portion 323 on the substrate 1 andthe orthographic projection of the second oxide semiconductor pattern322 on the substrate 1 have a fourth overlapping area. In the seconddirection perpendicular to the first direction, the second overlappingarea and the third overlapping area are located on a first side of thefirst oxide semiconductor pattern 312, and the first overlapping areaand the fourth overlapping area are located on a second side of thesecond oxide semiconductor pattern 322, and the first side and thesecond side are opposite to each other along the second direction.

Specifically, when there is an insulating layer between the conductiveconnection portion and the oxide semiconductor pattern, a first via holecan be provided in the insulating layer corresponding to the firstoverlapping area, and a second via hole can be provided in theinsulating layer corresponding to the second overlapping area, so thatthe first conductive connection portion 311 is coupled to the firstoxide semiconductor pattern 312 through the first via hole, and thesecond conductive connection portion 313 is coupled to the first oxidesemiconductor pattern 312 through the second via hole. When there is noinsulating layer between the conductive connection portion and the oxidesemiconductor pattern, that is, the first conductive connection portion311 and the second conductive connection portion 313 are directly formedon a surface of the first oxide semiconductor pattern 312 away from thesubstrate 1, so that the first conductive connection portion 311 can bedirectly lapped on the first oxide semiconductor pattern in the firstoverlapping region and the second conductive connection portion 313 canbe directly lapped on the first oxide semiconductor pattern 312 in thesecond overlapping area.

Similarly, when there is an insulating layer between the conductiveconnecting portion and the oxide semiconductor pattern, a third via holecan be provided in the insulating layer corresponding to the thirdoverlapping area, and a fourth via hole can be provided in theinsulating layer corresponding to the fourth overlapping area, so thatthe third conductive connection portion 321 is coupled to the secondoxide semiconductor pattern 322 through the third via hole, and thefourth conductive connection portion 323 is coupled to the second oxidesemiconductor pattern 322 through the fourth via hole; and when there isno insulating layer between the conductive connection portion and theoxide semiconductor pattern, that is, the third conductive connectionportion 321 and the fourth conductive connection portion 323 aredirectly formed on a surface of the second oxide semiconductor pattern322 away from the substrate 1, so that the third conductive connectionportion 321 can be directly lapped on the second oxide semiconductorpattern in the third overlapping area, and the fourth conductiveconnection portion 323 can be directly lapped on the second oxidesemiconductor pattern 322 in the fourth overlapping area.

In addition, in the above-mentioned embodiment, the specific positionsof the first overlapping area, the second overlapping area, the thirdoverlapping area, and the fourth overlapping area can be set accordingto actual needs, for example, can be arranged in the second direction,the second overlapping area and the third overlapping area are locatedon the first side of the first oxide semiconductor pattern 312, and thefirst overlapping area and the fourth overlapping area are located onthe second side of the second oxide semiconductor pattern 322, and thefirst side and the second side are opposite to each other along thesecond direction. In this structure, a channel region generated by thefirst oxide semiconductor pattern 312 and a channel region generated bythe second oxide semiconductor pattern 322 are independent of eachother, thereby avoiding interference between adjacent channel regionsduring operation. Moreover, this structure also makes the distancebetween the second conductive connection portion 313 and the thirdconductive connection portion 321 closer, which is not only moreconvenient for the coupling between the second conductive connectionportion 313 and the third conductive connecting portion 321, but alsomore conducive to reducing the area occupied by the oxide thin filmtransistor.

As shown in FIGS. 8 and 9, the thin film transistor further includes asecond lapping portion 5, and the second conductive connection portion313 and the third conductive connection portion 321 are coupled throughthe second lapping portion 5, the orthographic projection of the secondlapping portion 5 on the substrate 1 does not overlap the orthographicprojection of the first oxide semiconductor pattern 312 on the substrate1, and does not overlap the orthographic projection of the second oxidesemiconductor pattern 322 on the substrate 1; the second conductiveconnection portion 313, the second lapping portion 5, and the thirdconductive connection portion 321 can be formed in an in-line structurealong the first direction.

Specifically, when the second conductive connecting portion 313 and thethird conductive connecting portion 321 are coupled by the secondlapping portion, the specific shape and layout of the second lappingportion 5 are various. For example, the first direction is the Xdirection in the coordinate axis, when the first oxide semiconductorpattern 312 and the second oxide semiconductor pattern 322 are arrangedalong the X direction, the second lapping portion 5 is a strip-shapedpattern extending along the X direction, and the second conductiveconnecting portion 313 and the third conductive connecting portion 321are both strip-shaped patterns extending along the X direction. Thefirst end of the second lapping portion 5 along the X direction iscoupled to the second conductive connecting portion 313, and the secondend of the second lapping portion 5 along the X direction is coupled tothe third conductive connection portion 321, so that the secondconductive connecting portion 313, the second lapping portion 5, and thethird conductive connecting portion 321 can be formed in an in-linestructure along the X direction.

In addition, according to actual needs, the orthographic projection ofthe second lapping portion 5 on the substrate 1 and the orthographicprojection of the first oxide semiconductor pattern 312 on the substrate1 overlap or do not to overlap. And the orthographic projection of thesecond lapping portion 5 on the substrate 1 and the orthographicprojection of the second oxide semiconductor pattern 322 on thesubstrate 1 overlap or do not overlap.

In addition, the above-mentioned in-line structure formed by the secondconductive connection portion 313, the second lapping portion 5, and thethird conductive connection portion 321 can also be formed into anintegrated structure, so that the in-line structure is formed by onepatterning process, thereby effectively simplifying the manufacturingprocess of the oxide thin film transistor and saving the manufacturingcost of the oxide thin film transistor.

As shown in FIG. 8, it can be further provided that the first conductiveconnection portion 311 includes a fifth portion 3112 and a sixth portion3113 that are coupled to each other, and the fifth portion 3112 extendsalong the first direction, so that the orthographic projection of thefifth portion 3112 on the substrate 1 and the orthographic projection ofthe first oxide semiconductor pattern 312 on the substrate 1 have thefirst overlapping area; the sixth portion 3113 extends along the seconddirection, the orthographic projection of the sixth portion 3113 on thesubstrate 1 and the orthographic projection of the first oxidesemiconductor pattern 312 on the substrate 1 do not overlap.

Specifically, the first conductive connection portion 311 may include afifth portion 3112 and a sixth portion 3113 coupled to each other, thefifth portion 3112 may extend along the first direction, and theorthographic projection of the fifth portion 3112 on the substrate 1 andthe orthographic projection of the first oxide semiconductor pattern 312on the substrate 1 partially overlap to form the first overlapping area;the sixth portion 3113 may extend along the second direction, theorthographic projection of the sixth portion 3113 on the substrate 1 andthe orthographic projection of the first oxide semiconductor pattern 312on the substrate 1 do not overlap, and the sixth portion 3113 can becoupled to the first end of the fifth portion 3112, and the orthographicprojection of the first end on the substrate 1 and the orthographicprojection of the first oxide semiconductor pattern 312 on the substratedo not overlap, the first conductive connecting portion 311 formed afterthe fifth portion 3112 is coupled to the sixth portion 3113 may be of anL shape or T shape.

In addition, along the second direction, the width of the firstoverlapping area is the same as the width of the fifth portion 3112, butit is not limited to this.

When the first conductive connection portion 311 is formed into theabove structure, the first conductive connection portion 311 can be usedas the input electrode (such as the drain electrode) of the oxide thinfilm transistor, which is more convenient for the oxide thin filmtransistor to be coupled to external terminals.

Further, the fourth conductive connecting portion 323 includes a seventhportion 3232, an eighth portion 3233, and a ninth portion 3234; theseventh portion 3232 extends along the first direction, and theorthographic projection of the seventh portion 3232 on the substrate 1and the orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1 have the fourth overlapping area; theninth portion 3234 extends along the first direction, the orthographicprojection of the ninth portion 3234 on the substrate 1 and theorthographic projection of the second oxide semiconductor pattern 322 onthe substrate 1 do not overlap; the eighth portion 3233 extends alongthe second direction, the orthographic projection of the eighth portion3233 on the substrate 1 is located between the orthographic projectionof the seventh portion 3232 on the substrate 1 and the orthographicprojection of the ninth portion 3234 on the substrate 1, and does notoverlap the orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1. The seventh portion 3232 is coupled tothe ninth portion 3234 through the eighth portion 3233.

Specifically, the fourth conductive connecting portion 323 may include aseventh portion 3322, an eighth portion 3233, and a ninth portion 3234,the seventh portion 3232 extends along the first direction, and theorthographic projection of the seventh portion 3232 on the substrate 1and the orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1 have the fourth overlapping area.Further, the orthographic projection of the seventh portion 3232 on thesubstrate 1 is located within the orthographic projection of the secondoxide semiconductor pattern 322 on the substrate 1.

Along the second direction, the ninth portion 3234 can be arrangedopposite to the seventh portion 3232, the ninth portion 3234 extendsalong the first direction, and the orthographic projection of the ninthportion 3234 on the base 1 and the orthographic projection of the secondoxide semiconductor pattern 322 on the substrate 1 do not overlap.

The eighth portion 3233 extends along the second direction, and theorthographic projection of the eighth portion 3233 on the substrate 1 islocated between the orthographic projection of the seventh portion 3232on the substrate 1 and the orthographic projection of the ninth portion3234 on the substrate 1, one end of the eighth portion 3233 close to theseventh portion 3232 is coupled to the seventh portion 3232, and one endof the eighth portion 3233 close to the ninth portion 3234 is coupled tothe ninth portion 3234, so that the fourth conductive connecting portion323 formed by the seventh portion 3322, the eighth portion 3233, and theninth portion 3234 is of an I shape/H shape.

It is also worth noting that, according to actual needs, theorthographic projection of the eighth portion 3233 on the substrate 1and the orthographic projection of the second oxide semiconductorpattern 322 on the substrate 1 overlap or do not overlap .

Further, along the second direction, the width of the ninth portion 3234is greater than the width of the seventh portion 3232, so as to ensure abetter connection performance between the fourth conductive connectingportion 323 and the outside.

When the fourth conductive connecting portion 323 is provided with theabove structure, the seventh portion 3232, the eighth portion 3233, andthe ninth portion 3234 can be formed into an integrated structure, andthe fourth conductive connecting portion 323 is used as the outputelectrode (such as the source electrode) of the oxide thin filmtransistor, so that when the thin film transistor is used as the drivingtransistor in the pixel driving circuit, it is more conducive to thecoupling between the output electrode of the driving transistor and thecorresponding light-emitting element.

The oxide thin film transistor provided by the foregoing embodimentsincludes the oxide semiconductor patterns in each of the active layerstructures that are arranged in various ways. In some embodiments, theoxide semiconductor patterns in each of the active layer structures arearranged in the same layer and made of the same material. Specifically,the first oxide semiconductor pattern 312 and the second oxidesemiconductor pattern 322 may be arranged in the same layer and made ofthe same material.

When the oxide semiconductor patterns in each active layer structure arearranged in the same layer and made of the same material, the step ofmanufacturing the oxide semiconductor patterns in each active layerstructure specifically includes: manufacturing an oxide semiconductorthin film using an oxide semiconductor material; forming a photoresistcovering the oxide semiconductor thin film, and then exposing thephotoresist using a mask including a light-transmitting area and alight-shielding area to form a photoresist reserved area and aphotoresist removed area, in which the photoresist reserved areacorresponds to an area where the oxide semiconductor pattern in eachactive structure is located, and the photoresist removed areacorresponds to an area other than the area where the oxide semiconductorpattern in each active structure is located; removing the photoresistlocated in the photoresist removed area by a developer to expose theoxide semiconductor film located in the photoresist removed area, andthen removing the exposed oxide semiconductor film by an etchingprocess, and finally peeling off the remaining photoresist to form theoxide semiconductor pattern in each active layer structure.

In the foregoing arrangement, the oxide semiconductor patterns in theactive layer structures are arranged in the same layer and made of thesame material, so that the oxide semiconductor patterns in the activelayer structures are formed at the same time through a single patterningprocess, thereby effectively simplifying the above manufacturing processof the oxide thin film transistor, and reducing the production cost.

It should be noted that the above-mentioned “the same layer” refers to alayer structure formed by using the same film forming process to form afilm layer with a specific pattern, and then using the same mask platethrough a single patterning process. Depending on the specific pattern,a single patterning process may include multiple exposure, developmentor etching processes, and the specific patterns in the formed layerstructure may be continuous or discontinuous, and these specificpatterns may also be at different heights or have different thicknesses.

When the oxide semiconductor patterns in each active layer structure arearranged in the same layer and made of the same material, the step ofmanufacturing the oxide semiconductor patterns in each active layerstructure may include: forming the oxide semiconductor film layer ofeach oxide semiconductor pattern using a same film forming process; thenpatterning the oxide semiconductor film layer through a singlepatterning process, and forming the oxide semiconductor patterns in theactive layer structures are formed at the same time.

In the oxide thin film transistor provided by the foregoing embodiment,the specific arrangement of the first conductive connection portion 311,the second conductive connection portion 313, the third conductiveconnection portion 321, and the fourth conductive connection portion 323are various. For example, the first conductive connection portion 311,the second conductive connection portion 313, the third conductiveconnection portion 321, and the fourth conductive connection portion 323are arranged in the same layer and made of the same material.

Specifically, the first conductive connection portion 311, the secondconductive connection portion 313, the third conductive connectionportion 321, and the fourth conductive connection portion 323 arearranged in the same layer and made of the same material, so that thefirst conductive connection portion 311, the second conductiveconnection portion 313, the third conductive connection portion 321, andthe fourth conductive connection portion 323 can be formedsimultaneously in the same patterning process, thereby effectivelysimplifying the manufacturing process of the oxide thin film transistor.

The embodiments of the present disclosure also provide a display device,including the oxide thin film transistors provided in the aboveembodiments.

Since the oxide thin film transistor provided by the foregoingembodiments not only has higher stability, but also has a strong drivingcapability, when the oxide thin film transistor provided by theembodiments of the present disclosure is used to drive the pixels in thedisplay panel to emit light, it is avoided that the display panelgenerates driving bright spots and sand mura defects. Therefore, whenthe display device provided by the embodiments of the present disclosureincludes the above-mentioned oxide thin film transistors, it can alsoavoid the generation of driving bright spots and sand mura defects.

In addition, since the oxide thin film transistor provided by theforegoing embodiment has the advantages of simple manufacturing process,lower manufacturing cost, and smaller overall occupied area, when thedisplay device provided by the embodiment of the present disclosureincludes the foregoing oxide thin film transistor, the display devicealso has the beneficial effects of simple manufacturing process, lowmanufacturing cost, and high resolution.

It should be noted that the display device may be any product orcomponent with a display function, such as a TV, a monitor, a digitalphoto frame, a mobile phone, a tablet computer, and so on.

The embodiments of the present disclosure also provide a method ofdriving an oxide thin film transistor, which is used to drive the oxidethin film transistor provided in the above embodiment, and the drivingmethod includes: applying a driving signal to a gate electrode 2 of theoxide thin film transistor 2, a second conductive connection portion 313included in a first active layer structure 31, and a fourth conductiveconnection portion 323 included in a second active layer structure 32,so that the oxide thin film transistor is turned on.

Specifically, when the oxide thin film transistor is in operation, thedriving signal is applied to the gate electrode 2 of the oxide thin filmtransistor, the first conductive connection portion 313 included in thefirst active layer structure 31, and the fourth conductive connectionportion 323 included in the second active layer structure 32. Under thecontrol of the driving signal, each sub-Oxide TFT included in the oxidethin film transistor is turned on, so that the entire oxide thin filmtransistor is turned on and outputs the driving signal.

When the oxide thin film transistor is driven by the driving methodprovided by the embodiment of the present disclosure, since the oxidethin film transistor includes at least two active layer structures, sothat when the oxide thin film transistor is in operation, at leastseries-connected channel structures are formed, when the oxidesemiconductor pattern in one active layer structure of the oxide thinfilm transistor deteriorates, as shown in FIGS. 2, 4, 7 and 9, theperformance of only the sub-Oxide TFT corresponding to the source layerstructure will be affected, which makes that even if the characteristiccurve of the sub-Oxide TFT shift to the left, other sub-Oxide TFTs stillmaintain at a normal working state.

In more detail, when the oxide semiconductor pattern of one sub-OxideTFT deteriorates, it will cause on-state current Ion and off-statecurrent Ioff of the sub-Oxide TFT to increase, thus each sub-Oxide TFTis controlled to be in the on state. When the oxide thin film transistoris turned on as a whole, under the influence of the on-state current Ionof the sub-Oxide TFT, the overall on-state current Ion of the oxide thinfilm transistor increases, thereby effectively improving the chargingcapability of the oxide thin film transistor. When the oxide thin filmtransistor is in the off state, each sub-Oxide TFT is in the off state,so even if the off-state current Ioff of the sub-Oxide TFT increases, itcannot flow out from the oxide thin film transistor through othersub-Oxide TFTs. Therefore, the increased off-state current Ioff will notaffect the overall off-state current Ioff of the oxide thin filmtransistor, so that the overall off-state current Ioff of the oxide thinfilm transistor can still be maintained at a low level. Therefore, whenthe oxide thin film transistor is driven by the driving method providedby the embodiment of the present disclosure, the oxide thin filmtransistor not only has higher stability, but also has a strongerdriving capability. When the oxide thin film transistor is used to drivethe pixels in the display panel to emit light, it is avoided that thedisplay panel generates driving bright spots and sand mura defects.

It should be further appreciated that, the above embodiments have beendescribed in a progressive manner, and the same or similar contents inthe embodiments have not been repeated, i.e., each embodiment has merelyfocused on the difference from the others. Especially, the productembodiments are substantially similar to the method embodiments, andthus have been described in a simple manner.

Unless otherwise defined, any technical or scientific term used hereinshall have the common meaning understood by a person of ordinary skills.Such words as “first” and “second” used in the specification and claimsare merely used to differentiate different components rather than torepresent any order, number or importance. Similarly, such words as“one” or “one of” are merely used to represent the existence of at leastone member, rather than to limit the number thereof. Such words as“include” or “including” intends to indicate that an element or objectbefore the word contains an element or object or equivalents thereoflisted after the word, without excluding any other element or object.Such words as “connect/connected to” or “couple/coupled to” may includeelectrical connection, direct or indirect, rather than to be limited tophysical or mechanical connection. Such words as “on”, “under”, “left”and “right” are merely used to represent relative position relationship,and when an absolute position of the object is changed, the relativeposition relationship will be changed too.

It should be appreciated that, in the case that such an element aslayer, film, region or substrate is arranged “on” or “under” anotherelement, it may be directly arranged “on” or “under” the other element,or an intermediate element may be arranged therebetween.

In the above description, the features, structures, materials orcharacteristics may be combined in any embodiment or embodiments in anappropriate manner.

The above embodiments are for illustrative purposes only, but thepresent disclosure is not limited thereto. Obviously, a person skilledin the art may make further modifications and improvements withoutdeparting from the spirit of the present disclosure, and thesemodifications and improvements shall also fall within the scope of thepresent disclosure.

1. An oxide thin film transistor, comprising: a gate electrode arrangedon a substrate; and at least two active layer structures, wherein the atleast two active layer structures include a first active layer structureand a second active layer structure, the first active layer structureincludes a first conductive connection portion and a second conductiveconnection portion arranged oppositely, and a first oxide semiconductorpattern arranged between the first conductive connection portion and thesecond conductive connection portion, the first oxide semiconductorpattern is respectively coupled to the first conductive connectionportion and the second conductive connection portion, the second activelayer structure includes a third conductive connection portion and afourth conductive connection portion arranged oppositely, and a secondoxide semiconductor pattern arranged between the third conductiveconnection portion and the fourth conductive connection portion, and thesecond oxide semiconductor pattern is respectively connected to thethird conductive connection portion and the fourth conductive connectionportion, and an orthographic projection of the first oxide semiconductorpattern on the substrate and an orthographic projection of the secondoxide semiconductor pattern on the substrate are both located within anorthographic projection of the gate electrode on the substrate, thesecond conductive connection portion is coupled to the third conductiveconnection portion.
 2. The oxide thin film transistor according to claim1, wherein an orthographic projection of the first conductive connectionportion on the substrate and the orthographic projection of the firstoxide semiconductor pattern on the substrate have a first overlappingarea; an orthographic projection of the second conductive connectionportion on the substrate and the orthographic projection of the firstoxide semiconductor pattern on the substrate have a second overlappingarea; an orthographic projection of the third conductive connectionportion on the substrate and the orthographic projection of the secondoxide semiconductor pattern on the substrate have a third overlappingarea; an orthographic projection of the fourth conductive connectingportion on the substrate and the orthographic projection of the secondoxide semiconductor pattern on the substrate have a fourth overlappingarea; the second overlapping area and the third overlapping area arelocated between the first overlapping area and the fourth overlappingarea.
 3. The oxide thin film transistor according to claim 2, whereinthe thin film transistor further includes a first lapping portion, andthe second conductive connection portion and the third conductiveconnection portion are coupled to each other through the first lappingportion, and an orthographic projection of the first lapping portion onthe substrate does not overlap the orthographic projection of the firstoxide semiconductor pattern on the substrate, and does not overlap withthe orthographic projection of the second oxide semiconductor pattern onthe substrate.
 4. The oxide thin film transistor according to claim 3,wherein the first oxide semiconductor pattern and the second oxidesemiconductor pattern are sequentially arranged along a first direction,and are staggered along a second direction perpendicular to the firstdirection.
 5. The oxide thin film transistor according to claim 4,wherein an orthographic projection of the first oxide semiconductorpattern in the second direction and an orthographic projection of thesecond oxide semiconductor pattern in the second direction have a fifthoverlapping areas, the second conductive connection portion, the firstlapping portion, and the third conductive connection portion are formedas an integrated in-line structure extending along the second direction.6. The oxide thin film transistor according to claim 5, wherein a sizeof the fifth overlapping area in the first direction is the same as awidth of the integrated in-line structure in the first direction.
 7. Theoxide thin film transistor according to claim 2, wherein the first oxidesemiconductor pattern and the second oxide semiconductor pattern areformed as an integrated structure, and the second conductive connectionportion is multiplexed as the third conductive connection portion. 8.The oxide thin film transistor according to claim 3, wherein the atleast two active layer structures extend along a first direction, thefirst conductive connection portion includes a first portion and asecond portion, the first portion extends along a second directionperpendicular to the first direction, the second portion is extendedfrom the first portion along the second direction, an orthographicprojection of the first portion on the substrate and the orthographicprojection of the first oxide semiconductor pattern on the substratehave the first overlapping area, and an orthographic projection of thesecond portion on the substrate does not overlap the orthographicprojection of the first oxide semiconductor pattern on the substrate,wherein the first portion and the second portion form an integratedstrip structure along the second direction, wherein a width of the firstoverlapping area is the same as a width of the integrated stripstructure in the first direction. 9-10. (canceled)
 11. The oxide thinfilm transistor according to claim 3, wherein the at least two activelayer structures extend along a first direction, the fourth conductiveconnection portion includes a third portion and a fourth portion, thethird portion extends along a second direction perpendicular to thefirst direction, an orthographic projection of the third portion on thesubstrate and the orthographic projection of the second oxidesemiconductor pattern on the 1 partially overlap to form a fourthoverlapping area; the fourth portion extends along the first direction,an orthographic projection of the fourth portion on the substrate andthe orthographic projection of the second oxide semiconductor pattern onthe substrate do not overlap, and the fourth portion is coupled to afirst end of the third portion, and an orthographic projection of thefirst end on the substrate and the orthographic projection of the secondoxide semiconductor pattern on the substrate do not overlap.
 12. Theoxide thin film transistor according to claim 11, wherein the thirdportion includes a first sub-portion and a second sub-portion, anorthographic projection of the first sub-portion on the substrate andthe orthographic projection of the second oxide semiconductor pattern onthe substrate have the fourth overlapping area, an orthographicprojection of the second sub-portion on the substrate and theorthographic projection of the second oxide semiconductor pattern on thesubstrate do not overlap, wherein the third portion and the fourthportion are collectively formed as an L-shaped pattern or a T-shapedpattern, or wherein a width of the fourth overlapping region is the sameas a width of the third portion in the first direction, or wherein thethird portion and the fourth portion are formed as an integralstructure. 13-15. (canceled)
 16. The oxide thin film transistoraccording to claim 1, wherein the first oxide semiconductor pattern andthe second oxide semiconductor pattern are sequentially arranged along afirst direction, an orthographic projection of the first conductiveconnection portion on the substrate and the orthographic projection ofthe first oxide semiconductor pattern on the substrate have a firstoverlapping area; an orthographic projection of the second conductiveconnection portion on the substrate and the orthographic projection ofthe first oxide semiconductor pattern on the substrate have a secondoverlapping area; an orthographic projection of the third conductiveconnection portion on the substrate and the orthographic projection ofthe second oxide semiconductor pattern on the substrate 1 have a thirdoverlapping area; an orthographic projection of the fourth conductiveconnecting portion on the substrate and the orthographic projection ofthe second oxide semiconductor pattern on the substrate 1 have a fourthoverlapping area; in a second direction perpendicular to the firstdirection, the second overlapping area and the third overlapping areaare located on a first side of the first oxide semiconductor pattern,and the first overlapping area and the fourth overlapping area arelocated on a second side of the second oxide semiconductor pattern, andthe first side and the second side are opposite to each other.
 17. Theoxide thin film transistor according to claim 16, wherein the thin filmtransistor further includes a second lapping portion, and the secondconductive connection portion and the third conductive connectionportion are coupled to each other through the second lapping portion, anorthographic projection of the second lapping portion on the substratedoes not overlap the orthographic projection of the first oxidesemiconductor pattern on the substrate, and does not overlap theorthographic projection of the second oxide semiconductor pattern on thesubstrate.
 18. The oxide thin film transistor according to claim 17,wherein the second conductive connection portion, the second lappingportion, and the third conductive connection portion are formed in anintegrated in-line structure along the first direction.
 19. The oxidethin film transistor according to claim 16, wherein the first conductiveconnection portion includes a fifth portion and a sixth portion coupledto each other, and the fifth portion extends along the first direction,an orthographic projection of the fifth portion on the substrate and theorthographic projection of the first oxide semiconductor pattern on thesubstrate have the first overlapping area; the sixth portion extendsalong the second direction, an orthographic projection of the sixthportion on the substrate and the orthographic projection of the firstoxide semiconductor pattern on the substrate do not overlap.
 20. Theoxide thin film transistor according to claim 19, wherein the sixthportion is coupled to a first end of the fifth portion, and anorthographic projection of the first end on the substrate and theorthographic projection of the first oxide semiconductor pattern on thesubstrate do not overlap, a first conductive connecting portion formedafter the fifth portion is coupled to the sixth portion is of an L shapeor T shape.
 21. The oxide thin film transistor according to claim 16,wherein the fourth conductive connecting portion includes a seventhportion, an eighth portion, and a ninth portion; the seventh portionextends along the first direction, and an orthographic projection of theseventh portion on the substrate and the orthographic projection of thesecond oxide semiconductor pattern on the substrate have the fourthoverlapping area; the ninth portion extends along the first direction,an orthographic projection of the ninth portion on the substrate and theorthographic projection of the second oxide semiconductor pattern on thesubstrate do not overlap; the eighth portion extends along the seconddirection, an orthographic projection of the eighth portion on thesubstrate is located between the orthographic projection of the seventhportion on the substrate and the orthographic projection of the ninthportion on the substrate, and does not overlap the orthographicprojection of the second oxide semiconductor pattern on the substrate,the seventh portion is coupled to the ninth portion through the eighthportion.
 22. The oxide thin film transistor according to claim 21,wherein along the second direction, a width of the ninth portion isgreater than a width of the seventh portion wherein the seventh portion,the eighth portion, and the ninth portion form an integral structure.23. (canceled)
 24. The oxide thin film transistor according to claim 1,wherein the first oxide semiconductor pattern and the second oxidesemiconductor pattern are arranged at a same layer and made of a samematerial; or wherein the first conductive connection portion, the secondconductive connection portion, the third conductive connection portion,and the fourth conductive connection portion are arranged at a samelayer and made of a same material.
 25. (canceled)
 26. A display devicecomprising an oxide thin film transistor according to claim
 1. 27. Amethod of driving an oxide thin film transistor according to claim 1,comprising: applying a driving signal to the gate electrode of the oxidethin film transistor, the second conductive connection portion includedin the first active layer structure, and the fourth conductiveconnection portion included in the second active layer structure, sothat the oxide thin film transistor is turned on.